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2SC4467
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4467 160 120 6 8 3 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Audio and General Purpose
(Ta=25C) 2SC4467 10max 10max 120min 50min 1.5max 20typ 200typ V pF
20.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
V
a b
o3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
O(50 to100), P(70 to140), Y(90 to180)
5.450.1 B C E
sTypical Switching Characteristics (Common Emitter)
VCC (V) 40 RL () 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.4 IB2 (A) -0.4 ton (s) 0.13typ tstg (s) 3.50typ tf (s) 0.32typ
5.450.1
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
350m
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3
IC - V BE Temperature Characteristics (Typical)
8 (V C E= 4V)
A
8
20
1
m 50
0m
A
A
m 100
A
75 m A
Collector Current I C (A)
2
50m A
Collector Current I C (A)
6
6
4
4
mp)
mp)
Cas
C (
2
2
(Cas
IB=10mA
I C= 8A 0 4A 2A 0.5 0.6 0.7 0.8 0.9 1.0 0
0
0
1
2
3
4
0
0.1 0.2 0.3 0.4
0
0.5
-30C
25C
125
(Case
1
e Te
20mA
e Te
Temp
1.0
)
1.5
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
Base-Emittor Voltage V B E( V)
hFE - IC Characteristics (Typical)
(VCE=4V) 200 DC Curr ent Gain h FE
h FE - I C Temperature Characteristics (Typical)
(V C E= 4V) 200 125C DC Curr ent Gain h FE
j- a( C/W)
j-a - t Characteristics
3
Typ
100
100
25C -30C
Transient Thermal Resistance
1
50
50
0.5
20 0.02
0.1
0.5
1
5
8
20 0.02
0.3
0.1
0.5
1
5
8
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(VCE=12V) 40 20
Safe Operating Area (Single Pulse)
80
10 m s
P c - T a Derating
Cut-o ff Fr equ ency f T( M H Z)
30 Collector Cur rent I C( A)
M aximum Power Dissipa ti on P C( W)
10 5
100ms
60
W ith
Typ
DC
In fin ite he
20
40
at si
1
nk
0.5 Without Heatsink Natural Cooling
10
20
Without Heatsink 0 -0.02 -0.1 -1 Emitter Current I E( A) -8 0.1 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
107

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